1 #ifndef __CB_BDK_DRAM_TEST_H__
2 #define __CB_BDK_DRAM_TEST_H__
3
4 /***********************license start***********************************
5 * Copyright (c) 2003-2017 Cavium Inc. ([email protected]). All rights
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41 ***********************license end**************************************/
42
43 /**
44 * @file
45 *
46 * Functions for configuring DRAM.
47 *
48 * <hr>$Revision: 49448 $<hr>
49 *
50 * @defgroup dram DRAM related functions
51 * @{
52 */
53
54 /**
55 * Flags to pass to DRAM tests to control behavior
56 */
57 typedef enum
58 {
59 /* Which nodes to check. If none are specified, default to all */
60 BDK_DRAM_TEST_NODE0 = 1 << BDK_NODE_0,
61 BDK_DRAM_TEST_NODE1 = 1 << BDK_NODE_1,
62 BDK_DRAM_TEST_NODE2 = 1 << BDK_NODE_2,
63 BDK_DRAM_TEST_NODE3 = 1 << BDK_NODE_3,
64 BDK_DRAM_TEST_NO_STOP_ERROR = 1 << 8, /**< Don't stop running tests on errors, continue counting all errors */
65 BDK_DRAM_TEST_NO_PROGRESS = 1 << 9, /**< Don't report progress percentage during run, for batch runs */
66 BDK_DRAM_TEST_NO_STATS = 1 << 10, /**< Don't report usage status for LMC, or CCPI with USE_CCPI */
67 BDK_DRAM_TEST_NO_BANNERS = 1 << 11, /**< Don't display banenrs at beginning of test */
68 BDK_DRAM_TEST_USE_CCPI = 1 << 12, /**< Test using other node across CCPI. Use to verify CCPI. This
69 automatically enables CCPI usage reporting unless NO_STATS is
70 also specified */
71 } bdk_dram_test_flags_t;
72
73 /**
74 * Convert a test enumeration into a string
75 *
76 * @param test Test to convert
77 *
78 * @return String for display
79 */
80 extern const char* bdk_dram_get_test_name(int test);
81
82 /**
83 * Perform a memory test.
84 *
85 * @param test Test type to run
86 * @param start_address
87 * Physical address to start at
88 * @param length Length of memory block
89 * @param flags Flags to control memory test options. Zero defaults to testing all
90 * node with statistics and progress output.
91 *
92 * @return Number of errors found. Zero is success. Negative means the test
93 * did not run due to some other failure.
94 */
95 extern int
96 bdk_dram_test(int test, uint64_t start_address, uint64_t length,
97 bdk_dram_test_flags_t flags);
98
99 /**
100 * Given a physical DRAM address, extract information about the node, LMC, DIMM,
101 * rank, bank, row, and column that was accessed.
102 *
103 * @param address Physical address to decode
104 * @param node Node the address was for
105 * @param lmc LMC controller the address was for
106 * @param dimm DIMM the address was for
107 * @param prank Physical RANK on the DIMM
108 * @param lrank Logical RANK on the DIMM
109 * @param bank BANK on the DIMM
110 * @param row Row on the DIMM
111 * @param col Column on the DIMM
112 */
113 extern void
114 bdk_dram_address_extract_info(uint64_t address, int *node, int *lmc, int *dimm,
115 int *prank, int *lrank, int *bank, int *row, int *col);
116
117 /**
118 * Construct a physical address given the node, LMC, DIMM, rank, bank, row, and column.
119 *
120 * @param node Node the address was for
121 * @param lmc LMC controller the address was for
122 * @param dimm DIMM the address was for
123 * @param prank Physical RANK on the DIMM
124 * @param lrank Logical RANK on the DIMM
125 * @param bank BANK on the DIMM
126 * @param row Row on the DIMM
127 * @param col Column on the DIMM
128 */
129 extern uint64_t
130 bdk_dram_address_construct_info(bdk_node_t node, int lmc, int dimm,
131 int prank, int lrank, int bank, int row, int col);
132
133 /**
134 * Inject a DRAM error at a specific address in memory. The injection can either
135 * be a single bit inside the byte, or a double bit error in the ECC byte. Double
136 * bit errors may corrupt memory, causing software to crash. The corruption is
137 * written to memory and will continue to exist until the cache line is written
138 * again. After a call to this function, the BDK should report a ECC error. Double
139 * bit errors corrupt bits 0-1.
140 *
141 * @param address Physical address to corrupt. Any byte alignment is supported
142 * @param bit Bit to corrupt in the byte (0-7), or -1 to create a double bit fault in the ECC
143 * byte.
144 */
145 extern void bdk_dram_test_inject_error(uint64_t address, int bit);
146
147 /* These variables count the number of ECC errors. They should only be accessed atomically */
148 /* Keep the counts per memory channel (LMC) for more detail. */
149 #define BDK_MAX_MEM_CHANS 4
150 extern int64_t __bdk_dram_ecc_single_bit_errors[BDK_MAX_MEM_CHANS];
151 /* FIXME(dhendrix): redundant declaration in original BDK */
152 //extern int64_t __bdk_dram_ecc_double_bit_errors[BDK_MAX_MEM_CHANS];
153
154 /* These are internal support functions */
155 extern void __bdk_dram_flush_to_mem(uint64_t address);
156 extern void __bdk_dram_flush_to_mem_range(uint64_t area, uint64_t max_address);
157 extern void __bdk_dram_report_error(uint64_t address, uint64_t data, uint64_t correct, int burst, int fails);
158 extern void __bdk_dram_report_error2(uint64_t address1, uint64_t data1, uint64_t address2, uint64_t data2, int burst, int fails);
159 extern int __bdk_dram_retry_failure(int burst, uint64_t address, uint64_t data, uint64_t expected);
160 extern int __bdk_dram_retry_failure2(int burst, uint64_t address1, uint64_t data1, uint64_t address2, uint64_t data2);
161
__bdk_dram_write64(uint64_t address,uint64_t data)162 static inline void __bdk_dram_write64(uint64_t address, uint64_t data)
163 {
164 volatile uint64_t *ptr = bdk_phys_to_ptr(address);
165 *ptr = data;
166 }
167
__bdk_dram_read64(uint64_t address)168 static inline uint64_t __bdk_dram_read64(uint64_t address)
169 {
170 volatile uint64_t *ptr = bdk_phys_to_ptr(address);
171 return *ptr;
172 }
173
174 /* This is the function prototype that all test must use. "start_address" is
175 the first byte to be tested (inclusive), "end_address" is the address right
176 after the region (exclusive). For example, if start_address equals
177 end_address, no memory will be tested */
178 typedef int (*__bdk_dram_test_t)(uint64_t start_address, uint64_t end_address, int bursts);
179
180 /* These are the actual tests that get run. Each test is meant to be run with
181 a small range and repeated on lots of cores and large ranges. The return
182 value is the number of errors found */
183 extern int __bdk_dram_test_mem_address_bus(uint64_t start_address, uint64_t end_address, int bursts);
184 extern int __bdk_dram_test_mem_checkerboard(uint64_t start_address, uint64_t end_address, int bursts);
185 extern int __bdk_dram_test_mem_data_bus(uint64_t start_address, uint64_t end_address, int bursts);
186 extern int __bdk_dram_test_mem_leftwalk0(uint64_t start_address, uint64_t end_address, int bursts);
187 extern int __bdk_dram_test_mem_leftwalk1(uint64_t start_address, uint64_t end_address, int bursts);
188 extern int __bdk_dram_test_mem_random(uint64_t start_address, uint64_t end_address, int bursts);
189 extern int __bdk_dram_test_mem_rightwalk0(uint64_t start_address, uint64_t end_address, int bursts);
190 extern int __bdk_dram_test_mem_rightwalk1(uint64_t start_address, uint64_t end_address, int bursts);
191 extern int __bdk_dram_test_mem_rows(uint64_t start_address, uint64_t end_address, int bursts);
192 extern int __bdk_dram_test_mem_self_addr(uint64_t start_address, uint64_t end_address, int bursts);
193 extern int __bdk_dram_test_mem_solid(uint64_t start_address, uint64_t end_address, int bursts);
194 extern int __bdk_dram_test_mem_xor(uint64_t start_address, uint64_t end_address, int bursts);
195 extern int __bdk_dram_test_fast_scan(uint64_t area, uint64_t max_address, int bursts);
196
197 /** @} */
198
199
200 #endif /* !__CB_BDK_DRAM_TEST_H__ */
201